OTFTs using hybrid films as gate dielectrics prepared via UV curing and sol–gel reaction
✍ Scribed by June Whan Choi; Ho Gyu Yoon; Jai Kyeong Kim
- Book ID
- 104076106
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 398 KB
- Volume
- 11
- Category
- Article
- ISSN
- 1566-1199
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✦ Synopsis
The work presented here focuses on the preparation and characterization of gate dielectrics in organic thin-film transistors (OTFTs), fabricated by the sol-gel process. Hybrid dielectrics were prepared with acryl UV resin, titanium n-butoxide, catalytic HCl, and acetylacetone by sol-gel process and patterned by UV cross-linking below 120 °C. Leakage currents of dielectric layers remained below 10 À9 A under operating voltage and dielectric constants were measured to be $6.5 at 10 kHz. The field effect mobility and on-off ratio were $0.86 cm 2 /V s and $10 4 , respectively. These results demonstrate that sol-gel hybrid systems are suitable for gate dielectrics in OTFTs.