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Oscillatory As4 surface reaction rates during molecular beam epitaxy of AlAs, GaAs and InAs

โœ Scribed by J.Y. Tsao; T.M. Brennan; B.E. Hammons


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
482 KB
Volume
111
Category
Article
ISSN
0022-0248

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