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Origins of Hole Doping and Relevant Optoelectronic Properties of Wide Gap p-Type Semiconductor, LaCuOSe

โœ Scribed by Hiramatsu, Hidenori; Kamiya, Toshio; Tohei, Tetsuya; Ikenaga, Eiji; Mizoguchi, Teruyasu; Ikuhara, Yuichi; Kobayashi, Keisuke; Hosono, Hideo


Book ID
120055009
Publisher
American Chemical Society
Year
2010
Tongue
English
Weight
501 KB
Volume
132
Category
Article
ISSN
0002-7863

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Origin of high-density hole doping and a
โœ Hiramatsu, Hidenori ;Kamiya, Toshio ;Ueda, Kazushige ;Hirano, Masahiro ;Hosono, ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 432 KB

## Abstract LaCuOSe is a wide gap (__E__~g~โ€‰=โ€‰2.8โ€‰eV) pโ€type semiconductor. Epitaxial films may be converted to a degenerate semiconductor with hole concentrations (__n__~h~)โ€‰>โ€‰1โ€‰ร—โ€‰10^21^โ€‰cm^โˆ’3^ by doping Mg ions to the La sites. We, however, found that the Mg concentration in the highest __n__~h~