Origin of high-density hole doping and a
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Hiramatsu, Hidenori ;Kamiya, Toshio ;Ueda, Kazushige ;Hirano, Masahiro ;Hosono,
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Article
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2010
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John Wiley and Sons
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English
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## Abstract LaCuOSe is a wide gap (__E__~g~โ=โ2.8โeV) pโtype semiconductor. Epitaxial films may be converted to a degenerate semiconductor with hole concentrations (__n__~h~)โ>โ1โรโ10^21^โcm^โ3^ by doping Mg ions to the La sites. We, however, found that the Mg concentration in the highest __n__~h~