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Origin of the Variation of Exciton Binding Energy in Semiconductors

✍ Scribed by Dvorak, Marc; Wei, Su-Huai; Wu, Zhigang


Book ID
118209729
Publisher
The American Physical Society
Year
2013
Tongue
English
Weight
436 KB
Volume
110
Category
Article
ISSN
0031-9007

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Variational tight-binding theory of exci
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We present results for the binding energy of an exciton formed when an electron-hole pair is photoexcited within a single, compositionally modified layer of a semiconductor superlattice, for example by adding a small percentage of In atoms to a single GaAs layer of a GaAs/AlGaAs system. Such a syste