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Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular-beam epitaxy

✍ Scribed by Li, Wei; Pessa, Markus; Ahlgren, Tommy; Decker, James

Book ID: 111897451
Publisher: American Institute of Physics
Year: 2001
Tongue: English
Weight: 294 KB
Volume: 79
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1396316

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