Origin of cathodoluminescence from Si nanocrystal/SiO2 multilayers
β Scribed by Kim, Sung; Park, Yong Min; Choi, Suk-Ho; Kim, Kyung Joong
- Book ID
- 111686936
- Publisher
- American Institute of Physics
- Year
- 2007
- Tongue
- English
- Weight
- 695 KB
- Volume
- 101
- Category
- Article
- ISSN
- 0021-8979
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π SIMILAR VOLUMES
Si nanocrystals (Si-ncs) embedded in SiO 2 /SiN x multilayer structures can be of interest for optoelectronic devices such as solar cells. However, controlling the size and density of the Si-ncs is strongly requested for an efficient use in a functioning solar cell device. In this work, SiO 2 and S
## Abstract We present a photoluminescence excitation study of silicon nanocrystals in a SiO~2~ matrix. We show that although the excitation crossβsection is wavelengthβdependent and increases for shorter excitation wavelengths, the maximum timeβintegrated photoluminescence signal for a given sampl
Si-rich-SiO 2 layers with excess silicon of 45-50% were grown by RF magnetron co-sputtering from pure SiO 2 and Si targets and were studied by Raman scattering, HRTEM, electron-paramagnetic resonance and X-ray diffraction (XRD) methods as well as by photo-voltage technique operated at different temp