A technique for growing helium crystals
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D.T. Lawson
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Article
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1973
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Elsevier Science
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English
โ 521 KB
An apparatus has been developed in which hcp He4 single crystals of high quafity are grown with a 0.3 probability of obtaining c-axis orientations of 0 or 90 ยฐ with respect to the direction of growth. Methods of influencing the relative distribution of crystals between these two angles have been obs