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Orientation dependence of ferroelectric properties of Pb(ZrxTi1−x)O3 thin films on Pt/SiO2/Si substrates

✍ Scribed by Hirotake Fujita; Mitsunori Imade; Mitsuo Sakashita; Akira Sakai; Shigeaki Zaima; Yukio Yasuda


Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
125 KB
Volume
159-160
Category
Article
ISSN
0169-4332

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✦ Synopsis


Ž

. Ž . Ž . We have grown thin Pb Zr Ti O PZT films on PtrSiO rSi substrates by pulsed laser ablation PLA and

x 1yx 3 2 Ž . subsequent rapid thermal annealing RTA . X-ray diffraction analysis showed that the crystallographic orientation of PZT Ž . films after RTA clearly depended on the microstructure of as-deposited films. The preferentially 100 -oriented perovskite PZT films were obtained from the as-deposited films that had contained small grains having pyroclore structure. The capacitors made from these films showed high remnant polarization and good fatigue properties.


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