Orientation dependence of ferroelectric properties of Pb(ZrxTi1−x)O3 thin films on Pt/SiO2/Si substrates
✍ Scribed by Hirotake Fujita; Mitsunori Imade; Mitsuo Sakashita; Akira Sakai; Shigeaki Zaima; Yukio Yasuda
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 125 KB
- Volume
- 159-160
- Category
- Article
- ISSN
- 0169-4332
No coin nor oath required. For personal study only.
✦ Synopsis
Ž
. Ž . Ž . We have grown thin Pb Zr Ti O PZT films on PtrSiO rSi substrates by pulsed laser ablation PLA and
x 1yx 3 2 Ž . subsequent rapid thermal annealing RTA . X-ray diffraction analysis showed that the crystallographic orientation of PZT Ž . films after RTA clearly depended on the microstructure of as-deposited films. The preferentially 100 -oriented perovskite PZT films were obtained from the as-deposited films that had contained small grains having pyroclore structure. The capacitors made from these films showed high remnant polarization and good fatigue properties.
📜 SIMILAR VOLUMES
## Abstract ZnO thin films doped with Li (ZnO:Li) were deposited onto SiO~2~/Si (100) substrates by direct‐current sputtering technique in the temperature range from room temperature to 500 °C. The crystalline structure, surface morphology and composition, and optical reflectivity of the deposited