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Orientation and temperature dependence of H2S adsorption on cylindrical Ge and GaAs samples

โœ Scribed by H.J. Kuhr; W. Ranke; J. Finster


Publisher
Elsevier Science
Year
1986
Weight
123 KB
Volume
178
Category
Article
ISSN
0167-2584

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We studied the diffusion of Ge, As and Ga in GaAs/Ge and Ge/GaAs epilayers grown at different temperatures by metal-organic vapor phase epitaxy using iso-butylgermane, arsine and trimethylgallium in hydrogen atmosphere at low pressure. The use of low temperature buffer layers was investigated in ord