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Organometallic vapor phase epitaxy of high-performance strained-layer InGaAs-AlGaAs diode lasers

โœ Scribed by Wang, C.A.; Choi, H.K.


Book ID
117869428
Publisher
IEEE
Year
1991
Tongue
English
Weight
679 KB
Volume
27
Category
Article
ISSN
0018-9197

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Calculations of the femtosecond gain dynamics in InGaAs/AlGaAs strained-layer single-quantum-well diode lasers are presented and compared to experiments which use a novel multiple-wavelength pump probe technique. We develop a detailed theoretical model for the gain dynamics in a quantum well laser d