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Organic field-effect transistors with ultrathin modified gate insulator

โœ Scribed by L.A. Majewski; M. Grell


Book ID
116897512
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
239 KB
Volume
151
Category
Article
ISSN
0379-6779

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Nitrate-sensitive field-effect transisto
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## NItrate-sensltlve Ion-sensltlve field effect transistors (ISFETs) were prepared by chemical graftmg of the slhca gate msulator surface A dlfferentlal measurement mode between a reference ISFET with an Ion-msensltlve surface and an ISFET was used The msensltlve layer was prepared by graftmg 3-ch