๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Ordered growth of topological insulator Bi2Se3 thin films on dielectric amorphous SiO2 by MBE

โœ Scribed by Jerng, Sahng-Kyoon; Joo, Kisu; Kim, Youngwook; Yoon, Sang-Moon; Lee, Jae Hong; Kim, Miyoung; Kim, Jun Sung; Yoon, Euijoon; Chun, Seung-Hyun; Kim, Yong Seung

Book ID
121363205
Publisher
The Royal Society of Chemistry
Year
2013
Tongue
English
Weight
471 KB
Volume
5
Category
Article
ISSN
2040-3364

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

MBE growth optimization of topological i
MBE growth optimization of topological insulator Bi2Te3 films
โœ J. Krumrain; G. Mussler; S. Borisova; T. Stoica; L. Plucinski; C.M. Schneider; D ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 716 KB

We investigated the growth of the topological insulator Bi 2 Te 3 on Si(1 1 1) substrates by means of molecular-beam epitaxy (MBE). The substrate temperature as well as the Bi and Te beam-equivalent pressure (BEP) was varied in a large range. The structure and morphology of the layers were studied u