Optoelectronic Integrated Circuit Design and Device Modeling

✍ Scribed by Jianjun Gao

• Publisher: Wiley
• Year: 2011
• Tongue: English
• Leaves: 310
• Category: Library

✦ Synopsis

In Optoelectronic Integrated Circuit Design and Device Modeling, Professor Jianjun Gao introduces the fundamentals and modeling techniques of optoelectronic devices used in high-speed optical transmission systems. Gao covers electronic circuit elements such as FET, HBT, MOSFET, as well as design techniques for advanced optical transmitter and receiver front-end circuits. The book includes an overview of optical communication systems and computer-aided optoelectronic IC design before going over the basic concept of laser diodes. This is followed by modeling and parameter extraction techniques of lasers and photodiodes. Gao covers high-speed electronic semiconductor devices, optical transmitter design, and optical receiver design in the final three chapters.

• Addresses a gap within the rapidly growing area of transmitter and receiver modeling in OEICs
• Explains diode physics before device modeling, helping readers understand their equivalent circuit models
• Provides comprehensive explanations for E/O and O/E conversions done with laser and photodiodes
• Covers an extensive range of devices for high-speed applications
• Accessible for students new to microwaves
• Presentation slides available for instructor use

This book is primarily aimed at practicing engineers, researchers, and post-graduates in the areas of RF, microwaves, IC design, photonics and lasers, and solid state devices. The book is also a strong supplement for senior undergraduates taking courses in RF and microwaves.

Lecture materials for instructors available at www.wiley.com/go/gao

✦ Table of Contents

Optoelectronic Integrated Circuit Design and Device Modeling......Page 1
Contents......Page 7
Preface......Page 11
About the Author......Page 13
Nomenclature......Page 15
1.1 Optical Communication System......Page 19
1.2 Optoelectronic Integrated Circuit Computer-Aided Design......Page 23
1.3 Organization of This Book......Page 25
References......Page 26
2.1 Introduction......Page 27
2.2 Basic Concept......Page 28
2.2.1 Atom Energy......Page 29
2.2.2 Emission and Absorption......Page 30
2.2.3 Population Inversion......Page 32
2.3.1 Homojunction and Heterojunction......Page 33
2.3.2 Index Guiding and Gain Guiding......Page 36
2.3.3 Fabry–Perot Cavity Lasers......Page 38
2.3.4 Quantum-Well Lasers......Page 40
2.3.5 Distributed Feedback Lasers......Page 45
2.3.6 Vertical-Cavity Surface-Emitting Lasers......Page 51
2.4 Laser Characteristics......Page 52
2.4.1 Single-Mode Rate Equations......Page 53
2.4.2 Multimode Rate Equations......Page 56
2.4.3 Small-Signal Intensity Modulation......Page 58
2.4.4 Small-Signal Frequency Modulation......Page 62
2.4.5 Large-Signal Transit Response......Page 64
2.4.6 Second Harmonic Distortion......Page 66
2.4.7 Relative Intensity Noise......Page 69
2.4.8 Measurement Technique......Page 73
References......Page 76
3.1 Introduction......Page 81
3.2 Standard Double Heterojunction Semiconductor Lasers......Page 82
3.2.1 Large-Signal Model......Page 83
3.2.2 Small-Signal Model......Page 86
3.2.3 Noise Model......Page 90
3.3.1 One-Level Equivalent Circuit Model......Page 94
3.3.2 Two-Level Equivalent Circuit Model......Page 101
3.3.3 Three-Level Equivalent Circuit Model......Page 108
3.4.1 Direct-Extraction Method......Page 113
3.4.2 Semi-Analytical Method......Page 123
References......Page 129
4.1 Introduction......Page 131
4.2 Physical Principles......Page 132
4.3 Figures of Merit......Page 134
4.3.1 Responsivity......Page 135
4.3.2 Quantum Efficiency......Page 136
4.3.4 Dark Current......Page 137
4.3.5 Rise Time and Bandwidth......Page 139
4.4 Microwave Modeling Techniques......Page 140
4.4.1 PIN PD......Page 142
4.4.2 APD......Page 147
References......Page 163
5.1 Overview of Microwave Transistors......Page 167
5.2 FET Modeling Technique......Page 169
5.2.1 FET Small-Signal Modeling......Page 170
5.2.2 FET Large-Signal Modeling......Page 173
5.2.3 FET Noise Modeling......Page 179
5.3 GaAs/InP HBT Modeling Technique......Page 183
5.3.1 GaAs/InP HBT Nonlinear Model......Page 184
5.3.2 GaAs/InP HBT Linear Model......Page 186
5.3.3 GaAs/InP HBT Noise Model......Page 188
5.3.4 Parameter Extraction Methods......Page 189
5.4 SiGe HBT Modeling Technique......Page 193
5.5 MOSFET Modeling Technique......Page 194
5.5.1 MOSFET Small-Signal Model......Page 195
5.5.3 Parameter Extraction Methods......Page 199
References......Page 201
6.1 Basic Concepts......Page 205
6.1.1 NRZ and RZ Data......Page 206
6.1.2 Optical Modulation......Page 208
6.1.3 Optical External Modulator......Page 209
6.2 Optoelectronic Integration Technology......Page 212
6.2.1 Monolithic Optoelectronic Integrated Circuits......Page 213
6.2.2 Hybrid Optoelectronic Integrated Circuits......Page 215
6.3 Laser Driver Circuit Design......Page 217
6.4 Modulator Driver Circuit Design......Page 223
6.4.1 FET-Based Driver Circuit......Page 225
6.4.2 Bipolar Transistor-Based Driver Integrated Circuit......Page 233
6.4.3 MOSFET-Based Driver Integrated Circuit......Page 239
6.5 Distributed Driver Circuit Design......Page 240
6.6 Passive Peaking Techniques......Page 242
6.6.1 Capacitive Peaking Techniques......Page 243
6.6.2 Inductive Peaking Techniques......Page 244
References......Page 247
7 Optical Receiver Front-End Integrated Circuit Design......Page 251
7.1.1 Signal-to-Noise Ratio......Page 252
7.1.2 Bit Error Ratio......Page 253
7.1.3 Sensitivity......Page 255
7.1.4 Eye Diagram......Page 256
7.1.5 Signal Bandwidth......Page 258
7.1.6 Dynamic Range......Page 259
7.2 Front-End Circuit Design......Page 261
7.2.1 Hybrid and Monolithic OEIC......Page 262
7.2.2 High-Impedance Front-End......Page 263
7.2.3 Transimpedance Front-End......Page 265
7.3 Transimpedance Gain and Equivalent Input Noise Current......Page 268
7.3.1 S Parameters of a Two-Port Network......Page 269
7.3.2 Noise Figure of a Two-Port Network......Page 270
7.3.3 Transimpedance Gain......Page 271
7.3.4 Equivalent Input Noise Current......Page 273
7.3.5 Simulation and Measurement of Transimpedance Gain and Equivalent Input Noise Current......Page 275
7.4.1 BJT-Based Circuit Design......Page 280
7.4.2 HBT-Based Circuit Design......Page 281
7.4.3 FET-Based Circuit Design......Page 286
7.4.4 MOSFET-Based Circuit Design......Page 288
7.4.5 Distributed Circuit Design......Page 289
7.5.1 Inductive Peaking Techniques......Page 292
7.5.2 Capacitive Peaking Techniques......Page 295
7.6 Matching Techniques......Page 297
References......Page 302
Index......Page 307

✦ Subjects

Приборостроение;Оптоэлектроника;