Opto-electronic properties and light-emitting device application of widegap layered oxychalcogenides: LaCuOCh(Ch= chalcogen) and La2CdO2Se2

✍ Scribed by Hiramatsu, Hidenori ;Kamioka, Hayato ;Ueda, Kazushige ;Ohta, Hiromichi ;Kamiya, Toshio ;Hirano, Masahiro ;Hosono, Hideo

• Book ID: 105364052
• Publisher: John Wiley and Sons
• Year: 2006
• Tongue: English
• Weight: 517 KB
• Volume: 203
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200669665

✦ Synopsis

Abstract

Electronic and optical properties of widegap oxychalcogenides, LaCuO__Ch__ (Ch = chalcogen) and La~2~CdO~2~Se~2~, are reviewed with a focus on those relevant to their layered crystal structures, including high hole mobility, degenerate p‐type conduction, room temperature exciton, and large third order optical nonlinearity. In particular, the widegap p‐type metallic conduction was realized in Mg‐doped LaCuOSe: the first demonstration among any class of widegap materials including GaN:Mg. Furthermore, we demonstrate the room temperature operation of a blue light‐emitting diode using a pn hetero‐junction composed of a LaCuOSe epilayer and an n‐type amorphous InGaZn~5~O~8~. Those results strongly suggest that a series of the layered oxychalcogenides are applicable to the light‐emitting layers in opto‐electronic devices that operate in the ultraviolet–blue region as well as to transparent p‐type conductors. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)