Fabrication of SiGe quantum devices by e
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Joseph M. Ryan; Alec N. Broers; Douglas J. Paul; Michael Pepper; Terry E. Whall;
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Article
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1997
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Elsevier Science
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English
โ 285 KB
The effects of electron beam irradiation damage has been investigated in Si/SiGe heterostructures. The damage to SiGe two-dimensional hole gases (2DHGs) was measured as a function of accelerating voltage and electron dose. For 40 keV electrons at a dose of 2 C m -2 (typical PMMA resist values), the