Optimum design for high-power and high-efficiency GaAs Hi-Lo IMPATT diodes
β Scribed by Nishitani, K.; Sawano, H.; Ishihara, O.; Ishii, T.; Mitsui, S.
- Book ID
- 114592957
- Publisher
- IEEE
- Year
- 1979
- Tongue
- English
- Weight
- 457 KB
- Volume
- 26
- Category
- Article
- ISSN
- 0018-9383
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract An optimum design approach for a highly efficient power amplifier (PA) using a packaged highβpower device is described.Large fundamental load impedance assisted by a simple second harmonic manipulation is explored to improve the efficiency when maintaining the power density. For demonst
## Abstract In this study, a special inverted Doherty topology and uneven power drive methods are proposed to optimize the efficiency and appropriate load modulation. The amplifier is optimized at large power backβoff. The power added efficiency and adjacent channel leakage ratio (ACLR) are 33.1% a