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Optimized molecular beam epitaxial growth temperature profile for high-performance AlInAs/GaInAs single quantum well high electron mobility transistor structures

✍ Scribed by H. Künzel; J. Böttcher; A. Hase; S. Strähle; E. Kohn


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
406 KB
Volume
150
Category
Article
ISSN
0022-0248

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