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Optimization of thermoelectric properties of Bi2Se3using insertion techniques

✍ Scribed by Th. Kyratsi; E. Hatzikraniotis; K. Chrissafis; K. M. Paraskevopoulos


Book ID
105550501
Publisher
Springer-Verlag
Year
1998
Tongue
English
Weight
381 KB
Volume
4
Category
Article
ISSN
0947-7047

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Thermoelectric properties of Tl-doped Bi
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The single crystals of the ternary system based on Bi 2-x Tl x Se 3 (nominaly x = 0.0-0.1) were prepared using the Bridgman technique. Samples with varying content of Tl were characterized by the measurement of lattice parameters, electrical conductivity Οƒ βŠ₯c , Hall coefficient R H (B||c), and Seebe