Optimization of process conditions for the formation of hemispherical-grained (HSG) silicon in high-density DRAM capacitor
✍ Scribed by Yang Hee Joung; Hee Soon Kang; Seong Jun Kang
- Book ID
- 104420647
- Publisher
- Elsevier Science
- Year
- 2002
- Tongue
- English
- Weight
- 839 KB
- Volume
- 5
- Category
- Article
- ISSN
- 1369-8001
No coin nor oath required. For personal study only.
✦ Synopsis
We have compared the capacitances of a conventional stacked capacitor and hemispherical-grained silicon (HSG-Si), in which the seeding method was applied to storage electrode of 64 Mbit dynamic random access memory (DRAM) through Si 2 H 6 -molecule irradiation and annealing for HSG-Si formation. Also, we considered the variation of the HSG-Si thickness due to the phosphorus concentration of storage poly-silicon in process condition and the effect of its thickness on the cell capacitance and failure occurrence, etc. We investigated the effect of the deposition temperature of amorphous poly-silicon on the HSG-Si formation. As a result, the optimum process conditions of the phosphorus concentration, the deposition temperature of storage poly-silicon and the HSG thickness in HSG formation are 3.5-4.5 Â 10 19 atoms/cm 3 , 5301C and 450 ( A, respectively. It is found that the limit thickness of dielectric film of 64 Mbit DRAM capacitor according to the optimized process condition is 65 ( A.