Optimization of MW-PACVD diamond deposition parameters for high nucleation density and growth rate on Si3N4 substrate

Dependence of CVD diamond growth rate on

Dependence of CVD diamond growth rate on substrate orientation as a function of process parameters in the high microwave power density regime

✍ Brinza, O. ;Achard, J. ;Silva, F. ;Bonnin, X. ;Barroy, P. ;Corte, K. De ;Gicquel 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 469 KB

## Abstract The use of diamond as a material for high power electronics requires high‐purity monocrystalline thick diamond films. Hence it is extremely important to have perfect control of the morphology during the entire growth process, so that the useable surface be maximized and residual stresse