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Optimization of Molecular Beam Epitaxy (MBE) Growth for the Development of Mid-Infrared (IR) II–VI Quantum Cascade Lasers

✍ Scribed by R.T. Moug, H. Sultana, Y. Yao, A. Alfaro-Martinez, L. Peng, T. Garcia, A. Shen, C. Gmachl, M.C. Tamargo

Book ID
113087395
Publisher
Springer US
Year
2012
Tongue
English
Weight
339 KB
Volume
41
Category
Article
ISSN
0361-5235

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The development of molecular-beam epitaxy (MBE) of GaAs/AlGaAs heterostructures, used for fabrication of $9 mm quantum cascade lasers (QCLs), is reported. The X-ray diffractometry (XRD) structural characterization, as an integral part of this process, is presented as well. Some conclusions, concerni