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Optimization of GaMnAs growth in low temperature molecular beam epitaxy

✍ Scribed by Kyung-Hyun Kim; Jong-Hoon Park; Byung-Doo Kim; Chang-Soo Kim; Dojin Kim; Hyo-Jin Kim; Young-Eon Ihm

Book ID
105696378
Publisher
TechnoPress
Year
2002
Tongue
English
Weight
258 KB
Volume
8
Category
Article
ISSN
1598-9623

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Mn-doped GaAs thin films were grown at a high substrate temperature of 580 1C. During the growth process the Mn cell temperature was ramped at different rates, resulting in a variety of different Mn concentration depth profile slopes, as measured by dynamic secondary ion mass spectrometry (SIMS). Re