Optimization of EDM conditions in the manufacturing process of B4C and WC-Co conductive ceramics

Influence of the additives argon, O2, C4

Influence of the additives argon, O2, C4F8, H2, N2 and CO on plasma conditions and process results during the etch of SiCOH in CF4 plasma

✍ S. Zimmermann; N. Ahner; F. Blaschta; M. Schaller; H. Zimmermann; H. Rülke; N. L 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 648 KB

Reactive ion etch processes for modern interlevel dielectrics become more and more complex, especially for further scaling of interconnect dimensions. The materials will be damaged within such processes with the result of an increase in their dielectric constants. The capability of selected additive