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Optical transitions of InAs/In0.36Ga0.64As/GaAs(311B) surface quantum dots clearly identified by the piezoreflectance technique

✍ Scribed by C. Wang; Y. Yang; X.M. Chen; Z.L. Liu; H.Y. Cui; S. Zhang; X.S. Chen; W. Lu

Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
768 KB
Volume
254
Category
Article
ISSN
0169-4332

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The nature of optical transitions in Ga0.64In0.36As1−xNx/GaAs single quantum wells with low nitrogen content (x≤0.008)
✍ R. Kudrawiec; G. Sęk; K. Ryczko; J. Misiewicz; P. Sundgren; C. Asplund; M. Hamma 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 151 KB

Ga 0:64 In 0:36 As 12x N x =GaAs single quantum wells (SQWs) with low nitrogen content have been investigated by both photoluminescence (PL) and photoreflectance (PR) at low and room temperatures. A huge broadening of the PR features has been observed at low temperature and a decrease in this broade