✦ LIBER ✦

Optical property of In0.2Ga0.8As/GaAs strained multiple quantum-wells grown by using MOCVD

✍ Scribed by T.S Kim; J.Y Park; T.V Cuong; C.-H Hong

Book ID: 108165836
Publisher: Elsevier Science
Year: 2004
Tongue: English
Weight: 187 KB
Volume: 268
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2004.05.012

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Spin orientation by optical pumping of s

Spin orientation by optical pumping of strained In0.35Ga0.65As/GaAs quantum wells grown on vicinal substrates

✍ G. Bacquet; F. Hassen; N. Lauret; J. Barrau; A.Marti Ceschin; N. Grandjean; J. M 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 159 KB

Insulator passivation of In0.2Ga0.8As-Ga

Insulator passivation of In0.2Ga0.8As-GaAs surface quantum wells

✍ Passlack, M.; Hong, M.; Harris, T.D.; Mannaerts, J.P.; Vakhshoori, D.; Schnoes, 📂 Article 📅 1998 🏛 IEEE 🌐 English ⚖ 118 KB

Critical layer thickness in In0.2Ga0.8As

Critical layer thickness in In0.2Ga0.8As/GaAs single strained quantum well structures

✍ Fritz, I. J.; Gourley, P. L.; Dawson, L. R. 📂 Article 📅 1987 🏛 American Institute of Physics 🌐 English ⚖ 529 KB

Photoluminescence from strained GaAs/In0

Photoluminescence from strained GaAs/In0.12Ga0.88As multiple quantum-wells grown with and without growth interruption by molecular beam epitaxy

✍ S.F. Yoon; H.M. Li; K. Radhakrishnan; D.H. Zhang 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 263 KB

Low-temperature photoluminescence measurements were carried out to assess the changes in the properties of strained GaAs/InGaAs/GaAs multi-quantum-wells grown by molecular beam epitaxy at different substrate (well) temperatures with and without growth interruption at the heterointerfaces. Sharp exci

Analysis of strain in ultra-thin GaAs/In

Analysis of strain in ultra-thin GaAs/In0.2Ga0.8As/GaAs single quantum well structures by channeling technique

✍ A. Kozanecki; J. Kaczanowski; B.J. Sealy; W.P. Gillin 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 499 KB

Interdiffusion and thermally induced str

Interdiffusion and thermally induced strain relaxation in GaAs/In0.2Ga0.8As/GaAs single quantum well structures

✍ A. Kozanecki; B.J. Sealy; C. Jeynes; W.P. Gillin; R. Grey 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 491 KB