Optical properties of Si-Si1−xGexand Si-Ge nanostructures

✍ Scribed by Y. S. Tang; C. M. Torres; T. E. Whall; E. H. C. Parker; H. Presting; H. Kibbel

• Publisher: Springer US
• Year: 1995
• Tongue: English
• Weight: 698 KB
• Volume: 6
• Category: Article
• ISSN: 0957-4522
• DOI: 10.1007/bf00125892

✦ Synopsis

This paper reviews the current research status on the optical properties of Si-Sil _×Ge× and Si-Ge nanostructures. Although this is a relatively new field, existing research has already achieved promising results in terms of both physics and possible device applications including the effect of process-induced strain in nanostructures, quantum confinement and improved optical efficiency of collective excitation in wires with reduced dimension, and especiallythe huge improvement of optical efficiency in quantum dots after nanofabrication.

These results potentially open a new field of research into both the physics of Si-Sil-×Gex nanostructures and the possible applications of them in cheap Si based optoelectronic industry.