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Optical Properties of Semiconducting Ruthenium Silicide

โœ Scribed by L. I. Ivanenko; V. L. Shaposhnikov; V. E. Borisenko; D. Lenssen; R. Carius; S. Mantl

Book ID
110386984
Publisher
Springer US
Year
2001
Tongue
English
Weight
62 KB
Volume
68
Category
Article
ISSN
0021-9037

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Transport properties of semiconducting r
Transport properties of semiconducting rhenium silicide
โœ L. Ivanenko; V.L. Shaposhnikov; A.B. Filonov; D.B. Migas; G. Behr; J. Schumann; ๐Ÿ“‚ Article ๐Ÿ“… 2002 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 365 KB

Transport properties of semiconducting rhenium silicide ReSi were studied both experimentally and 1.75 theoretically. For this high quality ReSi single crystals were grown by the zone melting technique with 1.75 radiation heating and their resistivity and Hall coefficient were investigated. The room