𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Optical properties of InN grown on templates with controlled surface polarities

✍ Scribed by Kirste, Ronny ;Wagner, Markus R. ;Schulze, Jan H. ;Strittmatter, Andre ;Collazo, Ramon ;Sitar, Zlatko ;Alevli, Mustafa ;Dietz, Nikolaus ;Hoffmann, Axel

Publisher
John Wiley and Sons
Year
2010
Tongue
English
Weight
236 KB
Volume
207
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.

✦ Synopsis

Abstract

The structural and optical properties of InN layers grown on GaN/sapphire templates with controlled Ga‐/N‐polar surfaces are investigated. Raman spectroscopy and XRD reciprocal space map analysis suggest that the InN layers were grown strain free with a high crystal quality. A line shape analysis of the A~1~(LO) Raman mode yields to a decreasing carrier concentration for the sample grown on Ga‐polar substrate. Low temperature photoluminescence measurements exhibit a shift to lower energies of the luminescence maximum for the sample grown on Ga‐polar GaN probably due to a reduced carrier concentration and thus, a decreased Burstein–Moss shift. Following this, we demonstrate that the use of polarity controlled GaN/sapphire substrates leads to unstrained layers with good structural and optical properties.

📜 SIMILAR VOLUMES

Optical properties of InN grown on Si(11
Optical properties of InN grown on Si(111) substrate
✍ Sakalauskas, E. ;Schley, P. ;Räthel, J. ;Klar, T. A. ;Müller, R. ;Pezoldt, J. ;T 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 312 KB

## Abstract A comprehensive characterization of the optical properties of wurtzite InN films grown by molecular beam epitaxy on Si(111) substrates is presented. Two types of films are investigated in this work: InN on AlN/Si(111) and InN on GaN/AlN/Si(111). Their properties are compared to a layer

Structural and luminescence properties o
Structural and luminescence properties of In-rich InGaN layers grown on InN templates by RF-MBE
✍ Naoi, H. ;Kurouchi, M. ;Takado, S. ;Muto, D. ;Araki, T. ;Nanishi, Y. 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 431 KB

## Abstract Structural and luminescence properties of In‐rich In__~x~__ Ga~1−__x__~ N (0.71 ≤ __x__ ≤ 1) layers are comprehensively studied. The layers were grown on (0001) sapphire substrates by radio‐frequency plasma‐assisted molecular‐beam epitaxy, employing two types of underlying structures: l