𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Optical properties of delta poly-type quasiregular dielectric structures made of porous silicon

✍ Scribed by Agarwal, V. ;Escorcia-Garcia, J. ;Mora-Ramos, Miguel E.

Publisher
John Wiley and Sons
Year
2007
Tongue
English
Weight
425 KB
Volume
204
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.

✦ Synopsis

Abstract

To investigate the reflection of light in quasi‐regular dielectrics, we study here the optical properties of porous‐silicon‐based Fibonacci, Thue‐Morse and Period Doubling heterostructures. The multilayered systems are fabricated in such a way that each element in the two‐block substitutional sequence has a poly‐type structure. Both delta‐like and traditional configurations are considered. The results for the optical transmittance are analyzed and compared with the classical periodic structure. Numerical simulation for the transmittance along the lines of the transfer matrix approach is also presented. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

📜 SIMILAR VOLUMES

Structural and optical properties of vap
Structural and optical properties of vapour-etching based porous silicon
✍ H. Kaabi; N. Mliki; M. Cheynet; W. Saikaly; O. Gilbert; B. Bessaïs; B. Yangui; A 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 714 KB

## Abstract The structural and optical properties of porous silicon (PS) layers prepared by Vapour‐Etching (VE) of moderately and heavily boron‐doped Si substrates are investigated. The VE technique produces rough PS layers that are essentially formed of interconnected cluster‐like structures. Opti

Structure and optical properties of poro
Structure and optical properties of porous silicon prepared on thin epitaxial silicon layer on silicon substrates
✍ M. Balarin; O. Gamulin; M. Ivanda; V. Djerek; O. Celan; S. Music; M. Ristic; K. 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 743 KB

Porous silicon (PSi) samples were prepared by electrochemical etching of silicon-on-insulator wafers, consisting of 45 m thick p-type (111) silicon epitaxial layer grown on a thin 100 nm SiO 2 layer on silicon substrates, by varying the concentration of 48% HF in ethanol solution. Within the epitaxi