Different compositions of amorphous Ge 20 Se 80 and Ge 20 Se 75 M 5 (M= Cd, Bi, or Zn) semiconducting films were deposited onto cleaned glass substrates by thermal evaporation method. The interference transmission spectra T(l) at normal incidence for Ge 20 Se 75 M 5 thin films were obtained in the w
Optical properties of amorphous Ge20Se80 and Ag6(Ge0.20Se0.80)94 thin films
โ Scribed by Anup Thakur; G. Singh; G.S.S. Saini; N. Goyal; S.K. Tripathi
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 254 KB
- Volume
- 30
- Category
- Article
- ISSN
- 0925-3467
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โฆ Synopsis
Thin films of chemical composition Ge 20 Se 80 and Ag 6 (Ge 0.20 Se 0.80 ) 94 are prepared by thermal evaporation technique. The optical properties of these thin films are determined by a method, based only on the transmission spectra at normal incidence, measured over the 400-2000 nm spectral range. This useful optical method takes into consideration the non-uniform thickness of thermally evaporated thin films. The dispersion of refractive index is discussed in terms of the single-oscillator Wemple and DiDomenico model. The optical absorption edge is described using the non-direct transition model proposed by Tauc and the optical band gap รฐE opt g ร is calculated from the absorption coefficient (a) by Tauc's extrapolation procedure. It has been found that the value of refractive index (n) and oscillator strength (E d ) increase while average energy gap (E 0 ) and รฐE opt g ร decrease after Ag incorporation. The decrease of รฐE opt g ร has been explained on the basis of difference on the binding energies of different bonds which are arising due to the incorporation of Ag into a-Ge 20 Se 80 thin films.
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