✦ LIBER ✦

Optical Programming/Electrical Erasing Memory Device Based on Low-Voltage Organic Thin-Film Transistor

✍ Scribed by Wei Wang; Dongge Ma; Qiang Gao

Book ID: 114620922
Publisher: IEEE
Year: 2012
Tongue: English
Weight: 335 KB
Volume: 59
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2012.2187296

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Organic low voltage rewritable memory de

Organic low voltage rewritable memory device based on PEDOT:PSS/f-MWCNTs thin film

✍ José A. Ávila-Niño; Wagner S. Machado; Alan O. Sustaita; E. Segura-Cardenas; M. 📂 Article 📅 2012 🏛 Elsevier Science 🌐 English ⚖ 779 KB

An optical programming/electrical erasin

An optical programming/electrical erasing memory device: Organic thin film transistors incorporating core/shell CdSe@ZnSe quantum dots and poly(3-hexylthiophene)

✍ Mao-Yuan Chiu; Chen-Chia Chen; Jeng-Tzong Sheu; Kung-Hwa Wei 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 744 KB

Current-Voltage Hysteresis and Memory Ef

Current-Voltage Hysteresis and Memory Effects in Ambipolar Organic Thin Film Transistors Based on a Substituted Oligothiophene

✍ Cai, X.; Gerlach, C.P.; Frisbie, C.D. 📂 Article 📅 2007 🏛 American Chemical Society 🌐 English ⚖ 143 KB

Low-voltage organic n-channel thin-film

Low-voltage organic n-channel thin-film transistors based on a core-cyanated perylene tetracarboxylic diimide derivative

✍ Ute Zschieschang; Konstantin Amsharov; R. Thomas Weitz; Martin Jansen; Hagen Kla 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 519 KB

Low-voltage, high-performance n-channel

Low-voltage, high-performance n-channel organic thin-film transistors based on tantalum pentoxide insulator modified by polar polymers

✍ Linfeng Lan; Junbiao Peng; Mingliang Sun; Jianlin Zhou; Jianhua Zou; Jian Wang; 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 512 KB

Polar polymers (polyfluorene copolymers, PFN-PBT) with different polarities are utilized to modify the surface of tantalum pentoxide (Ta 2 O 5 ) insulator in n-channel organic thin-film transistors (OTFTs). A high mobility of 0.55 cm 2 /Vs, high on/off current ratio of 1.7 Â 10 5 , and low threshold

Interface Engineering in High-Performanc

Interface Engineering in High-Performance Low-Voltage Organic Thin-Film Transistors Based on 2,7-Dialkyl-[1]benzothieno[3,2- b ][1]benzothiophenes

✍ Amin, Atefeh Y.; Reuter, Knud; Meyer-Friedrichsen, Timo; Halik, Marcus 📂 Article 📅 2011 🏛 American Chemical Society 🌐 English ⚖ 870 KB