Optical nutation in a magnetized semiconductor quantum well structure

✍ Scribed by Sharmila Banerjee; Pranay K. Sen

• Publisher: Elsevier Science
• Year: 1999
• Tongue: English
• Weight: 189 KB
• Volume: 26
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.1999.0773

✦ Synopsis

Using the semiclassical coherent radiation-semiconductor interaction model, optical nutation has been analysed in a GaAs/Al x Ga 1-x As quantum well structure (QWS) assumed to be immersed in a moderately strong magnetic field and irradiated by a not-too-strong near band gap resonant femtosecond pulsed Ti-sapphire laser. The finite potential well depth of the QWS and the Wannier-Mott excitonic structure of the crystal absorption edge is taken into account. The excitation intensity is assumed to be below the Mott transition where the various many-body effects have been neglected with adequate reasoning. Numerical analysis made for a GaAs quantum well of thickness ∼100 Åand the confining layers of Al x Ga 1-x As with x = 0.3 at intensity I ≤ 5 × 10 6 W cm -2 reveals that the real and imaginary parts of the transient complex-induced polarization are enhanced with an increase in the magnetic field and their ringing behaviour confirms the occurrence of optical nutation in the QWS.