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Optical gain in GaAs/GaAlAs graded-index separate-confinement single-quantum-well heterostructures

✍ Scribed by Zhu, L.D.; Zheng, B.D.; Xu, Z.Y.; Xu, J.Z.; Feak, G.A.B.


Book ID
117867632
Publisher
IEEE
Year
1989
Tongue
English
Weight
820 KB
Volume
25
Category
Article
ISSN
0018-9197

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Graded Index Separate Confinement Heterostructures have been grown by MOVPE using ( \(\mathrm{Zn}, \mathrm{Cd}) \mathrm{Se}\) and \(\mathrm{ZnSe}\) wide bandgap semiconductors. These structures are composed of a deep \(\mathrm{Zn}_{1-x} \mathrm{Cd} d_{x} \mathrm{Se}(x<0.23 \%)\) central well embedde