We describe photoluminescence measurements made on mesa geometry quantum dots and wires with exposed side walls fabricated by laterally patterning undoped GaAs/A1GaAs quantum wells using electron beam lithography and dry etching. At low temperature the photoluminescence efficiency of many but not al
Optical characterization of quantum wires and quantum dots
β Scribed by Samuelson, L. ;Gustafsson, A. ;Hessman, D. ;Lindahl, J. ;Montelius, L. ;Petersson, A. ;Pistol, M.-E.
- Publisher
- John Wiley and Sons
- Year
- 1995
- Tongue
- English
- Weight
- 647 KB
- Volume
- 152
- Category
- Article
- ISSN
- 0031-8965
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