Optical characterization of extremely high purity ZnSe grown by metal-organic vapour phase epitaxy using dimethylzinc-triethylamine adduct

✍ Scribed by T. Cloitre; N. Briot; O. Briot; B. Gil; R.L. Aulombard; A.C. Jones

• Book ID: 103954341
• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 425 KB
• Volume: 21
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(93)90341-j

✦ Synopsis

Zinc selenide (ZnSe) is now a material of established interest for the design of optoelectronic devices, following the achievement of both types of conductivity by M. Haase et al. (Appl. Phys. Lett., 59 ( 1991 ) 1272). The p-type doping of this material is now well established in molecular beam epitaxy, and work is in progress in many laboratories to transpose this to metal-organic vapour phase epitaxy (MOVPE).

One of the problems to be solved in MOVPE, for the successful achievement of p-type doping, is that of obtaining a material with very low electron background concentrations, to avoid compensation effects. It has previously been demonstrated, by Jones, Wright and co-workers (Semicond.