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Optical characterization of CuInSe2single crystals prepared by travelling heater method

✍ Scribed by Shirakata, Sho ;Miyake, Hideto


Book ID
105364042
Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
267 KB
Volume
203
Category
Article
ISSN
0031-8965

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✦ Synopsis


Abstract

Temperature dependences of photoreflectance (PR), photoluminescence (PL), and time‐resolved PL have been determined for bulk CuInSe~2~ single crystals grown by a travelling heater method. The PR spectra exhibited excitonic AB (1.04 eV) and C (1.27 eV) transitions, and their temperature dependence has been determined. PL exhibited an exciton peak at 1.036 eV at 8 K. Other PL peaks at 0.99 eV and 1.01 eV quenched at 40 K and 100 K, respectively. For 50–200 K, exciton PL exhibited thermal quenching with an activation energy (Ξ”__E__ ) of 16 meV. Further increase in temperature (200 K < T < 300 K) leads to a strong broadening of PL, an abrupt PL energy decrease, and a negative thermal quenching (Ξ”__E__ = –89 meV). With increase in temperature, the PL lifetime decreases for 80 K < T < 160 K, while it increases for 180 K < T < 300 K. These results suggest a change of the recombination mechanism at about 200 K. (Β© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)


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