Optical and structural characterization of copper indium disulfide thin films

✍ Scribed by D.O. Henderson; R. Mu; A. Ueda; M.H. Wu; E.M. Gordon; Y.S. Tung; M. Huang; J. Keay; L.C. Feldman; J.A. Hollingsworth; W.E. Buhro; J.D. Harris; A.F. Hepp; R.P. Raffaelle

• Publisher: Elsevier Science
• Year: 2001
• Weight: 410 KB
• Volume: 22
• Category: Article
• ISSN: 0261-3069
• DOI: 10.1016/s0261-3069(01)00019-x

✦ Synopsis

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. Thin films of copper indium disulfide CuInS were synthesized by spray chemical vapor deposition. Rutherford backscattering 2 measurements were used to determine the composition and thickness of the films. The elemental ratios were found to be within 2% of stoichiometrically correct CuInS . The thickness of the films was found to be approximately 1.0 m. An optical band-gap 2 of approximately 1.44 eV for this material was determined by optical transmission spectroscopy. Reflectance spectroscopy identified phonon bands centered at 225, 291 and 317 cm y1 .