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Optical absorption spectra of a-Si:H MIS structure measured by transient photocapacitance spectroscopy

โœ Scribed by Geuk-Jeong Bang; Hyuk-Ryeol Park


Book ID
116670611
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
473 KB
Volume
353
Category
Article
ISSN
0022-3093

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Photocreation and photobleaching of a-Si
โœ C. Godet; J. Kanicki ๐Ÿ“‚ Article ๐Ÿ“… 1993 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 314 KB

The a-Si N, ,:Hic-Si interface density of states is studied by the photocapacitance transient spectroscopy (PCTS) technique. After illumination with 4.13 eV photons, the PCTS reveals an interface defect creation while the midgap voltage shift indicates a hole injection from c-Si and subsequent hole