Optical absorption and photoelectric properties of Ga2In4S9 single crystals
β Scribed by N. A. Moldovyan; V. Z. Chebotaru
- Publisher
- John Wiley and Sons
- Year
- 1990
- Tongue
- English
- Weight
- 398 KB
- Volume
- 25
- Category
- Article
- ISSN
- 0232-1300
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## Abstract For Abstract see ChemInform Abstract in Full Text.
The optical energy gap of Re doped MoSe 2 single crystal Mo 0.995 Re 0.005 Se 2 has been measured at room temperature near the fundamental absorption edge. The incident light was kept normal to the basal plane i.e. along the c-axis of the grown crystals. Results have been given on the basis of two a
Bi 2 Se 3-x As x single crystals with the As content of c As = 0 to 2.0x10 19 atoms/cm 3 prepared from the elements of 5N purity by means of a modified Bridgman method were characterized by measurements of infrared reflectance and transmittance. Values of the plasma resonance frequency Ο p , optica