One-step etch-through porous silicon membrane with an open cavity and pore size tuning
✍ Scribed by Kan, P. Y. Y. ;Finstad, T. G.
- Book ID
- 105363843
- Publisher
- John Wiley and Sons
- Year
- 2006
- Tongue
- English
- Weight
- 425 KB
- Volume
- 203
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
✦ Synopsis
Abstract
A thin porous silicon (PS) membrane has been fabricated by electrochemical etching in a hydrofluoric acid (HF) electrolyte in a simple new process. Membrane areas (0.3 mm^2^) were defined photolithographically by SU8 negative resist. The etching current was varied during the single‐step process to define the thickness of the membrane by electrochemically thinning the Si wafer at high current followed by a lower current pore formation and etch through. The process is simple and fast being completed in less than 2 hours for standard Si wafers. Different ways of improving robustness, yield, etch resistance of the mask, membrane uniformity, pore sizes control and applications are discussed. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)