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One of the Possibilities to Improve Optical Quality of As-Grown Shaped Sapphire Crystals

โœ Scribed by T. N. Yalovets; P. A. Gurjiyants; V. N. Kurlov; F. Theodore; J. Delepine


Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
87 KB
Volume
34
Category
Article
ISSN
0232-1300

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Improvement of crystal quality of AlN gr
โœ Mu-Jen Lai; Liann-Be Chang; Tzu-Tao Yuan; Ray-Ming Lin ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 142 KB ๐Ÿ‘ 1 views

## Abstract The crystalline quality of aluminum nitride (AlN) epilayers grown on sapphire substrates by MOCVD was improved by increasing hydrogen flow rate during the high temperature growth process. The AlN epilayer exhibited a root mean square (rms) of roughness was 1.944 nm from the 2ร—2 ยตm^2^ si