Improvement of crystal quality of AlN gr
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Mu-Jen Lai; Liann-Be Chang; Tzu-Tao Yuan; Ray-Ming Lin
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Article
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2010
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John Wiley and Sons
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English
โ 142 KB
๐ 1 views
## Abstract The crystalline quality of aluminum nitride (AlN) epilayers grown on sapphire substrates by MOCVD was improved by increasing hydrogen flow rate during the high temperature growth process. The AlN epilayer exhibited a root mean square (rms) of roughness was 1.944 nm from the 2ร2 ยตm^2^ si