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One-dimensional electronic systems in ultra-fine mesa etched InGaAs-InAlAs-InP quantum wires

✍ Scribed by K. Kern; T. Demel; D. Heitmann; P. Grambow; K. Ploog; M. Razeghi

Book ID: 118363886
Publisher: Elsevier Science
Year: 1990
Tongue: English
Weight: 335 KB
Volume: 229
Category: Article
ISSN: 0039-6028
DOI: 10.1016/0039-6028(90)90883-a

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The photoluminescence (PL) properties of undoped \(\operatorname{InGaAs} / \mathrm{InP}\) quantum wires are studied in a magnetic field up to \(16 \mathrm{~T}\). The quantum wires are fabricated with a combination of electron-beam lithography, reverse mesa wet etching, and metal organic-vapour-phase