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On the Way to the Investigation of Hydrogen in GaN: Hydrogen in Nitrogen Doped GaP and GaAs

✍ Scribed by Clerjaud, B. ;Côte, D. ;Hahn, W.-S. ;Lebkiri, A. ;Ulrici, W. ;Wasik, D.


Publisher
John Wiley and Sons
Year
1997
Tongue
English
Weight
235 KB
Volume
159
Category
Article
ISSN
0031-8965

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Hydrogen detection and analysis was carried out on the undoped semi-insulating (S.I.) gallium arsenide (GaAs) single crystal using conventional elastic recoil detection analysis (ERDA) technique with high energy, heavy ion beam. Presence of hydrogen (nearly 3 x 10 20 atoms/cc) has been observed on t