On the variances of generation-recombination noise in a three-level system

✍ Scribed by F.N. Hooge; L. Ren

• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 352 KB
• Volume: 193
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/0921-4526(94)90049-3

✦ Synopsis

A statistical treatment is given of the generation-recombination noise in a semiconductor with a conduction band and two traps X and Y. The system is described in terms of x and y, where x is half the harmonic mean of the numbers of occupied and empty traps X. A corresponding definition is given for y. The use of x and y makes the formalism very transparent. Simple, explicit relations are easily found, which can be further simplified by approximations depending on the ratios between N, x and y. We consider correlations and Burgess' theorem; time dependence and spectra are not discussed.