On the validity of the amphoteric-defect model in gallium arsenide and a criterion for Fermi-level pinning by defects

✍ Scribed by C. -H. Chen,T. Y. Tan

• Book ID: 118290129
• Publisher: Springer
• Year: 1995
• Tongue: English
• Weight: 808 KB
• Volume: 61
• Category: Article
• ISSN: 1432-0630
• DOI: 10.1007/bf01540114