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On the theory of the deep levels of transition metal impurities in semiconductors

โœ Scribed by Fleurov, V N; Kikoin, K A


Book ID
121439145
Publisher
Institute of Physics
Year
1976
Tongue
English
Weight
655 KB
Volume
9
Category
Article
ISSN
0022-3719

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Deep level transient spectroscopy of tra
โœ P. Clauws; J. Van Gheluwe; J. Lauwaert; E. Simoen; J. Vanhellemont; M. Meuris; A ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 190 KB

The n-and p-type germanium wafers have been implanted with Ti, Cr, Fe and Co and the electronic defect levels have been studied by deep level transient spectroscopy (DLTS). Distinct spectra with two to four levels have been observed which are assigned to multipleacceptor states of the substitutional