On the theory of p-n junction perturbed cavities

✍ Scribed by Gyula Veszely

• Publisher: Elsevier Science
• Year: 1992
• Tongue: English
• Weight: 237 KB
• Volume: 12
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(92)90298-n

✦ Synopsis

If a reverse-biased semiconductor junction is placed in a microwave cavity, then changing the width of the depleted region causes the input impedance and reflection coefficient of the cavity to be changed. The coupling factor and frequency are calculated under which a given depletion region width change causes the greatest change in the absolute value of the reflection coefficient.