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On the Theory of Anisotropic Thermoelectric power in Semiconductros

✍ Scribed by A. G. Samoilovich; M. V. Nitsovich; V. M. Nitsovich

Publisher
John Wiley and Sons
Year
1966
Tongue
English
Weight
284 KB
Volume
16
Category
Article
ISSN
0370-1972

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## Abstract The spin‐disorder model is adopted to calculate the electrical resistivity and thermoelectric power of ferromagnetic metallic galsses within the molecular field approximation. The resistivity expression interpolates correctly between the low (__T__ = 0 K) and the high temperature (__T__