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On the semiclassical approach to the ionization process during sputtering

✍ Scribed by J. Zavadil

Publisher
Elsevier Science
Year
1984
Weight
240 KB
Volume
143
Category
Article
ISSN
0167-2584

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On the understanding of positive and neg
On the understanding of positive and negative ionization processes during ToF-SIMS depth profiling by co-sputtering with cesium and xenon
✍ J. Brison; J. Guillot; B. Douhard; R.G. Vitchev; H.-N. Migeon; L. Houssiau πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 476 KB

In this paper, ionization processes of secondary ions during ToF-SIMS dual beam depth profiling were studied by co-sputtering with 500 eV cesium and xenon ions and analyzing with 25 keV Ga + ions. The Cs/Xe technique consists in diluting the cesium sputtering/etching beam with xenon ions to control