On the roughness of ideally planar H–Si(111) surfaces. An atomic force microscopy approach

Atomic force microscopy and high-resolut

Atomic force microscopy and high-resolution RBS investigation of the surface modification of magnetron sputter-etched Si(111) in an argon plasma at different pressures

✍ Deenapanray, P. N. K.; Hillie, K. T.; Demanet, C. M.; Ridgway, M. C. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 353 KB 👁 2 views

The surface morphology and metallic contamination of magnetron sputter-etched Si(111) was investigated by atomic force microscopy (AFM) and high-resolution Rutherford backscattering spectroscopy (RBS) as a function of Ar plasma pressure. The root-mean-square roughness (R rms ) of plasma-etched Si de